MOSFETS WITH LOW THRESHOLD VALUE

被引：4
作者：
SINGH, A [1 ]
KEMHADJIAN, HA [1 ]
机构：
[1] UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
来源：
MICROELECTRONICS AND RELIABILITY | 1980年 / 20卷 / 04期
关键词：
D O I：
10.1016/0026-2714(80)90604-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：533 / 534
页数：2
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