PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON

被引：33
作者：
MOORE, AR
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期
关键词：
D O I：
10.1063/1.91892
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：327 / 330
页数：4
相关论文
共 12 条
  • [1] SIGN OF HALL-EFFECT IN HOPPING CONDUCTION
    EMIN, D
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1189 - 1198
  • [2] HALL-EFFECT IN ORDERED AND DISORDERED SYSTEMS
    FRIEDMAN, L
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (05): : 467 - 476
  • [3] Friedman L., 1971, J NONCRYST SOLIDS, V6, P329
  • [4] GARRETA O, 1956, PROGR SEMICONDUCTORS, V1, P166
  • [5] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON
    LECOMBER, PG
    JONES, DI
    SPEAR, WE
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187
  • [6] PHOTOELECTROMAGNETIC AND PHOTODIFFUSION EFFECTS IN GERMANIUM
    MOSS, TS
    PINCHERLE, L
    WOODWARD, AM
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (405): : 743 - 752
  • [7] SMITH RA, 1959, SEMICONDUCTORS, P214
  • [8] SOMMERS HS, 1956, PHYS REV, V101, P983
  • [9] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS
    VANROOSBROECK, W
    [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1713 - 1725
  • [10] THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR
    VANROOSBROECK, W
    [J]. PHYSICAL REVIEW, 1953, 91 (02): : 282 - 289
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