A STUDY OF VOIDS IN SPUTTERED SIO2

被引:6
作者
LOGAN, JS [1 ]
HAIT, MJ [1 ]
JONES, HC [1 ]
FIRTH, GR [1 ]
THOMPSON, DB [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.576291
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1392 / 1396
页数:5
相关论文
共 5 条
[1]   RESPUTTERING DURING ION-BEAM SPUTTER DEPOSITION [J].
HOFFMAN, DW ;
BADGLEY, JS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1791-1791
[2]   RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J].
JONES, RE ;
STANDLEY, CL ;
MAISSEL, LI .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4656-&
[4]   SIO2 PLANARIZATION TECHNOLOGY WITH BIASING AND ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION FOR SUBMICRON INTERCONNECTIONS [J].
MACHIDA, K ;
OIKAWA, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :818-821
[5]   STUDY OF PLANARIZED SPUTTER-DEPOSITED SIO2 [J].
TING, CY ;
VIVALDA, VJ ;
SCHAEFER, HG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1105-1112