VELOCITY OVERSHOOT IN ULTRA-SHORT-GATE-LENGTH GAAS-MESFETS

被引：35
作者：
BERNSTEIN, G
FERRY, DK
机构：
[1] Arizona State Univ, Tempe, AZ, USA, Arizona State Univ, Tempe, AZ, USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - Transport Properties - TRANSISTORS; FIELD EFFECT;
D O I：
10.1109/16.3340
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs MESFETs with ultrashort gates between 0. 035 and 0. 065 mu m were fabricated to determine trends in their DC transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. An approximation based on the gradual channel approximation becomes valid at ultrashort gate lengths due to an increased percentage of the channel that is velocity-saturated.
引用
收藏
页码：887 / 892
页数：6
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