DISPLACEMENT CRITERION FOR AMORPHIZATION OF SILICON DURING ION-IMPLANTATION

被引：106
作者：
CHRISTEL, LA
GIBBONS, JF
SIGMON, TW
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期
关键词：
D O I：
10.1063/1.328688
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：7143 / 7146
页数：4
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