FLUENCE DEPENDENCE OF DISORDER DEPTH PROFILES IN PB IMPLANTED SI

被引：10

作者：

CHRISTODOULIDES, CE ^{[1
]}

KADHIM, NJ ^{[1
]}

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 52卷 / 3-4期

关键词：

D O I：

10.1080/00337578008210035

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：225 / 234

页数：10

共 28 条

[1]

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[2]

BOTTIGER J, 1972, ION IMPLANTATION SEM, P599

[3] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J].

BROWER, KL ;

VOOK, FL ;

BORDERS, JA .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :208-&

[4] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J].

BROWER, KL ;

BEEZHOLD, W .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3499-&

[5]

CARTER G, RAD EFF, V37, P21

[6]

CARTER G, 1979, RAD EFF LETT, V43, P1

[7] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[8] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[9]

EISEN FH, 1970, P EUROPEAN C ION IMP, P227

[10]

EISEN FH, 1973, CHANNELING, P415

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