INTERPRETATION OF THE PARABOLIC AND NONPARABOLIC OXIDATION BEHAVIOR OF SILICON OXYNITRIDE

The oxidation process of Si2N2O, prepared by a hot isostatic pressing technique, has been studied by the thermogravimetric method. The oxidation has been performed in oxygen for 20 h in the temperature range 1300-degrees to 1600-degrees-C, producing oxide scales of amorphous SiO2 and alpha-cristobalite. The weight gain for T greater-than-or-equal-to 1350-degrees-C does not begin to follow a parabolic rate law, until a certain time, t0. The A0 parameter in the parabolic rate law, (DELTAw/A0)2 = K(p)t + B, represents the cross section area, A, through which the oxygen diffuses; in the derivation of this Law A is assumed to be constant during the experiment. If crystallization occurs during the oxidation process, A will decrease with time. A function, A(t), describing the time dependence, has been developed and incorporated into the parabolic rate law, yielding a new rate law, which reads DELTAW/A0 = a arctan square-root bt + c square-root t. This new rate law is valid in the time interval t < t0, whereas, for t > t0, the oxidation process follows the equation (DELTAw/A0)2 = K(p)t-degrees + B0. The relation of the latter equation to the common parabolic rate law is described. All of the oxidation curves are described by these equations. The activation energy of the oxygen diffusion (and of the oxidation (K(p))) is found to be 245 +/- 25 kJ/mol, which is consistent with literature values reported for oxygen diffusion.