GIANT MAGNETORESISTANCE IN ANTIFERROMAGNETIC CO/CU MULTILAYERS

被引：533

作者：

PARKIN, SSP ^{[1
]}

LI, ZG ^{[1
]}

SMITH, DJ ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85289

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report giant values of saturation magnetoresistance in sputtered antiferromagnetic Co/Cu multilayers containing thin Co and Cu layers 8-10 angstrom thick. We discuss the key importance of the buffer layer in controlling the growth of flat Co and Cu layers. As shown by cross-section transmission electron microscopy high-quality structures are found for growth on Fe buffer layers. Such structures display saturation magnetoresistance at 300 K of more than 65% with saturation fields of congruent-to 10 kOe. These values are several times larger than previously found for any magnetic material at room temperature.

引用

页码：2710 / 2712

页数：3

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