POWER DISSIPATION LIMITATIONS IN SILICON AND SILICON-ON-SAPPHIRE VLSI TECHNOLOGIES

被引：0
|
作者：
VALDEZ, JB [1 ]
MCGREIVY, DJ [1 ]
机构：
[1] HUGHES AIRCRAFT CO,NEWPORT RES CTR,NEWPORT BEACH,CA 92663
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C341 / C341
页数：1
相关论文
共 50 条
  • [41] ELLIPSOMETRY OF ROUGH SILICON SURFACES - COMMENT ON THE ROUGHNESS OF HETEROEPITAXIAL SILICON-ON-SAPPHIRE
    PICKERING, C
    GREEF, R
    HODGE, AM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 574 - 578
  • [42] Simulation and Optimization of Silicon-on-Sapphire Pressure Sensor
    Kulesh, N. A.
    Kudyukov, E. V.
    Balymov, K. G.
    Beloyshov, A. A.
    IV INTERNATIONAL YOUNG RESEARCHERS' CONFERENCE: PHYSICS, TECHNOLOGIES AND INNOVATION (PTI-2017), 2017, 1886
  • [43] Production, Characterization and Application of Silicon-on-sapphire Wafers
    Pramanik, Alokesh
    Liu, Mei
    Zhang, L. C.
    ADVANCES IN MATERIALS PROCESSING IX, 2010, 443 : 567 - +
  • [44] Silicon-on-sapphire photodetector for optical logic elements
    Blynskii, V.I.
    Malyshev, S.A.
    Rakhlei, S.Yu.
    Chumak, V.D.
    Optoelectronics, instrumentation, and data processing, 1989, (03) : 129 - 131
  • [45] Multichannel ultrathin silicon-on-sapphire optical interconnects
    Liu, JJ
    Kalayjian, Z
    Riely, B
    Chang, W
    Simonis, GJ
    Apsel, A
    Andreou, A
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (02) : 380 - 386
  • [46] Digital isolation amplifier in silicon-on-sapphire CMOS
    Culurciello, E.
    Pouliquen, P. O.
    Andreou, A. G.
    ELECTRONICS LETTERS, 2007, 43 (08) : 451 - 452
  • [47] Spin-dependent magnetophotoconductivity in silicon-on-sapphire
    O'Raifeartaigh, C
    Alhourani, M
    Leonard, F
    Barklie, RC
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6557 - 6560
  • [48] Investigation of silicon-on-sapphire structures by means of TEM
    Pavlov D.A.
    Shilyaev P.A.
    Korotkov E.V.
    Krivulin N.O.
    Bobrov A.I.
    Bulletin of the Russian Academy of Sciences: Physics, 2012, 76 (9) : 1002 - 1004
  • [49] CHARACTERIZATION OF SILICON-ON-SAPPHIRE FILMS FOR LSI TECHNOLOGY
    LEE, CC
    HU, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C85 - C85
  • [50] CHANNEL DOPING PROFILE OF SILICON-ON-SAPPHIRE TRANSISTORS
    LIN, AL
    MADDOX, RL
    MEE, JE
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2091 - 2098
12345