POWER DISSIPATION LIMITATIONS IN SILICON AND SILICON-ON-SAPPHIRE VLSI TECHNOLOGIES

被引：0
|
作者：
VALDEZ, JB [1 ]
MCGREIVY, DJ [1 ]
机构：
[1] HUGHES AIRCRAFT CO,NEWPORT RES CTR,NEWPORT BEACH,CA 92663
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C341 / C341
页数：1
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