POWER DISSIPATION LIMITATIONS IN SILICON AND SILICON-ON-SAPPHIRE VLSI TECHNOLOGIES

被引：0

作者：

VALDEZ, JB ^{[1
]}

MCGREIVY, DJ ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,NEWPORT RES CTR,NEWPORT BEACH,CA 92663

来源：

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C341 / C341

页数：1

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