AUGER AND RADIATIVE RECOMBINATION OF ACCEPTOR BOUND EXCITONS IN DIRECT BAND-GAP SEMICONDUCTORS

被引：0

作者：

OSBOURN, GC ^{[1
]}

SMITH, DL ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1979年 / 24卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：365 / 365

页数：1

共 50 条

[41] Band-gap measurements of direct and indirect semiconductors using monochromated electrons [J].

Gu, Lin ;

Srot, Vesna ;

Sigle, Wilfried ;

Koch, Christoph ;

van Aken, Peter ;

Scholz, Ferdinand ;

Thapa, Sarad B. ;

Kirchner, Christoph ;

Jetter, Michael ;

Ruehle, Manfred .

PHYSICAL REVIEW B, 2007, 75 (19)

[42] ELECTROLUMINESCENCE IN LARGE BAND-GAP SEMICONDUCTORS [J].

PANKOVE, JI .

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP) :107-107

[43] Codoping in wide band-gap semiconductors [J].

Katayama-Yoshida, H ;

Nishimatsu, T ;

Yamamoto, T ;

Orita, N .

COMPOUND SEMICONDUCTORS 1998, 1999, (162) :747-756

[44] BAND-GAP EXCITONS IN PBI2 [J].

THANH, LC ;

DEPEURSINGE, C ;

LEVY, F ;

MOOSER, E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (7-8) :699-702

[45] INFLUENCE OF FREE CARRIERS ON RADIATIVE RECOMBINATION OF EXCITONS IN SEMICONDUCTORS [J].

KHADZHI, PI ;

MOSKALENKO, SA ;

RUSSU, AS .

SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07) :846-850

[46] EXCITONS AND THE BAND-GAP IN POLY(PHENYLENE VINYLENE) [J].

DACOSTA, PG ;

CONWELL, EM .

PHYSICAL REVIEW B, 1993, 48 (03) :1993-1996

[47] QUANTUM MONTE-CARLO STUDIES OF BINDING-ENERGY AND RADIATIVE LIFETIME OF BOUND EXCITONS IN DIRECT-GAP SEMICONDUCTORS [J].

CANCIO, AC ;

CHANG, YC .

PHYSICAL REVIEW B, 1993, 47 (20) :13246-13259

[48] A generation/recombination model assisted with two trap centers in wide band-gap semiconductors [J].

Yamaguchi, Ken ;

Kuwabara, Takuhito ;

Uda, Tsuyoshi .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (10)

[49] RADIATIVE RECOMBINATION ACROSS THE E0+DELTA-0 BAND-GAP IN CDTE [J].

LUSSON, A ;

WAGNER, J .

PHYSICAL REVIEW B, 1989, 40 (18) :12520-12522

[50] RADIATIVE RECOMBINATION OF EXCITONS BOUND TO RADIATION DEFECTS IN GERMANIUM [J].

BYKOVSKII, VA ;

ZYATKOVA, NI ;

TKACHEV, VD .

SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12) :1361-1363

← 1 2 3 4 5 →