PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS

被引：42

作者：

LUM, WY

WIEDER, HH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 12期

关键词：

D O I：

10.1063/1.324550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6187 / 6188

页数：2

共 13 条

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[6] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J].

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JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5347-&

[7] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

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NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[8] THERMALLY CONVERTED SURFACE-LAYERS IN SEMI-INSULATING GAAS [J].

LUM, WY ;

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :213-215

[9] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J].

LUM, WY ;

WIEDER, HH ;

KOSCHEL, WH ;

BISHOP, SG ;

MCCOMBE, BD .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :1-3

[10]

MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188

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