SEMICONDUCTOR-LASER AMPLIFIER OPTIMIZATION - AN ANALYTICAL AND EXPERIMENTAL-STUDY

被引：20

作者：

GILLNER, L ^{[1
]}

GOOBAR, E ^{[1
]}

THYLEN, L ^{[1
]}

GUSTAVSSON, M ^{[1
]}

机构：

[1] ERICSSON TELECOM AB,DEPT LINE TRANSMISS & FIBRE OPT,S-12625 STOCKHOLM,SWEDEN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 08期

关键词：

D O I：

10.1109/3.34041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1822 / 1827

页数：6

共 13 条

[1]

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[3]

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[8] CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING [J].

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[9] INTEGRATED-OPTIC DEVICE FOR HIGH-SPEED DATABUSES [J].

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[10] AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS [J].

THYLEN, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1532-1537

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