SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS

被引：29

作者：

MORIIZUMI, T

TAKAHASHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 03期

关键词：

D O I：

10.1143/JJAP.8.348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：348 / +

页数：1

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