GALLIUM PHOSPHIDE ELECTROLUMINESCENCE

Recent developments are described concerning electroluminescence from GaP p-n diodes. A discussion is given of methods of crystal growth and junction formation, and this is followed by an account of the emission of red light from these diodes. Much of this account involves a discussion of low-temperature photo-luminescent spectra from GaP, a full understanding of which is necessary before the room-temperature electroluminescence can be understood. Similarly, green emitting diodes are discussed and here emphasis is laid upon the contribution that the isoelectronic trap nitrogen can make to the green light. Finally, non-radiative recombination is considered, and it is concluded that three-body events occurring at defects can result in very effective non-radiative recombination via an Auger transition.