LOW THRESHOLD CURRENT PROTON-ISOLATED (GAAL)AS DOUBLE HETEROSTRUCTURE LASERS

被引：19

作者：

STEVENTON, AG ^{[1
]}

FIDDYMENT, PJ ^{[1
]}

NEWMAN, DH ^{[1
]}

机构：

[1] POST OFF RES CTR,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1977年 / 9卷 / 06期

关键词：

D O I：

10.1007/BF01208762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：519 / 525

页数：7

共 18 条

[1]

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[3] INFLUENCE OF ALXGA1-XAS LAYER THICKNESS ON THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-ALXGA1-XAS DH LASERS [J].

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[4] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].

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[5] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

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[6] CARRIER REMOVAL AFTER H1+, H2+ OR H3+ IMPLANTS INTO GAAS [J].

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[7] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028

[8] STRIPED GAAS LASERS - MODE SIZE AND EFFICIENCY [J].

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JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2723-2730

[9] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :855-862

[10]

KIRKBY P, TO BE PUBLISHED

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