LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION

被引：51

作者：

FENG, M ^{[1
]}

WINDHORN, TH ^{[1
]}

TASHIMA, MM ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 11期

关键词：

D O I：

10.1063/1.89920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：758 / 761

页数：4

共 19 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577

[2]

ANTYPAS GA, 1976, I C SER B, V33, P96

[3] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J].

COLEMAN, JJ ;

HITCHENS, WR ;

HOLONYAK, N ;

LUDOWISE, MJ ;

GROVES, WO ;

KEUNE, DL .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :725-727

[4]

COLEMAN JW, UNPUBLISHED

[5]

Hsieh J.J., 1976, I PHYS C SER B, V33, P37

[6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[7]

HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[8] LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED IN0.53GA0.47AS ON (100)-ORIENTED INP [J].

HYDER, SB ;

ANTYPAS, GA ;

ESCHER, JS ;

GREGORY, PE .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :551-553

[9] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH [J].

NAGAI, H ;

NOGUCHI, Y .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :234-236

[10] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J].

NAKAJIMA, K ;

KUSUNOKI, T ;

AKITA, K ;

KOTANI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :123-127

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