EXAMINATION OF STACKING AND TECHNOLOGICAL FAULTS IN SILICON BY SCANNING ELECTRON-MICROSCOPY

被引：0
|
作者：
LATYSHENKO, VF [1 ]
SHEIKHET, EG [1 ]
SHAKHOVTSOV, VI [1 ]
机构：
[1] ZAPOROZHE IND INST, ZAPOROZHE, UKRAINE, USSR
来源：
UKRAINSKII FIZICHESKII ZHURNAL | 1986年 / 31卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1579 / 1582
页数：4
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