IONIZATION OF IMPURITIES IN SILICON

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 196 - 198

[4] CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2668 - +

[5] VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 373 - 380

[6] INVESTIGATION OF TELLURIUM-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 381 - 388

[7] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 609 - 616

[8] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY AND RESISTIVITY IN BORON DOPED SILICON [J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1109 - 1117

[9] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 764 - 769

[10] MORGAN TN, 1965, PHYS REV A, V139, P343

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 196 - 198

[4] CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2668 - +

[5] VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 373 - 380

[6] INVESTIGATION OF TELLURIUM-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 381 - 388

[7] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 609 - 616

[8] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY AND RESISTIVITY IN BORON DOPED SILICON [J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1109 - 1117

[9] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 764 - 769

[10] MORGAN TN, 1965, PHYS REV A, V139, P343