INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH

被引：137

作者：

ASTLES, MG ^{[1
]}

SMITH, FGH ^{[1
]}

WILLIAMS, EW ^{[1
]}

机构：

[1] ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND

来源：

关键词：

D O I：

10.1149/1.2403357

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1750 / 1757

页数：8

共 17 条

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[4] ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)]
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[5] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .2. MOBILITY OF N-TYPE GALLIUM ARSENIDE
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[J]. PHYSICAL REVIEW, 1967, 160 (03): : 618 - &
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[9] GERMANIUM-DOPED GALLIUM ARSENIDE
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ERMANIS, F
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[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 264 - +
[10] ROSZTOCZY FE, 1970, S GAAS AACHEN, P86