THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS

被引：35
作者：
PERSKY, G
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 12期
关键词：
D O I：
10.1016/0038-1101(72)90128-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1345 / &
相关论文
共 8 条
[1]  
ANDREWS JM, 1968, IEEE SOLID STATE DEV
[2]  
BETHE HA, 1942, MIT4212 RAD LAB REP
[3]  
CHU JL, 1971, INT ELECTRON DEVICES
[4]  
CHU JL, TO BE PUBLISHED
[5]   MICROWAVE TRANSISTORS - THEORY AND DESIGN [J].
COOKE, HF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1163-+
[6]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[7]   ANALYSIS OF PUNCH-THROUGH-INJECTION FOR A TRANSIT-TIME NEGATIVE RESISTANCE DIODE [J].
SHEOREY, UB ;
LUNDSTROM, I ;
ASH, EA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 30 (01) :19-+
[8]   SPACE-CHARGE LIMITED EMISSION IN SEMICONDUCTORS [J].
SHOCKLEY, W ;
PRIM, RC .
PHYSICAL REVIEW, 1953, 90 (05) :753-758
1