HIGH-PERFORMANCE CMOS/SOS CIRCUITS IN SPEAR MATERIAL

被引：0

作者：

MAYER, DC ^{[1
]}

LEE, A ^{[1
]}

KRAMER, AR ^{[1
]}

MILLER, KD ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 01期

关键词：

D O I：

10.1109/4.50322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

- High-speed CMOS/SOS devices and LSI circuits, including inverter ring oscillators with 0.6-μm gate lengths, a 16-bit universal shift register, an 8-bit multiplexer/demultiplexer, and a variable modulus 10/11 prescaler with gate lengths ranging from 1.0 to 1.25 μm, have been fabricated in silicon-on-sapphire material recrystallized by the solid-phase epitaxy and regrowth (SPEARTM) technique. © 1990 IEEE

引用

页码：318 / 321

页数：4

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