THE CARBON IMPURITY DEPENDENCE OF LIGHT-INDUCED METASTABLE EFFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：2
作者：
UNOLD, T
COHEN, JD
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷
关键词：
D O I：
10.1016/0022-3093(89)90663-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：603 / 605
页数：3
相关论文
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[4]   DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].
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[5]   EVIDENCE FOR THE INTRINSIC NATURE OF LIGHT-INDUCED DEFECTS IN UNDOPED A-SI-H [J].
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