INFLUENCE OF TRANSITIONS VIA DEEP IMPURITY CENTERS ON NONLINEAR ABSORPTION OF LIGHT IN SEMICONDUCTORS

被引：0
作者：
DVORNIKOV, DP [1 ]
IVCHENKO, EL [1 ]
PERSHIN, VV [1 ]
YAROSHETSKII, ID [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 12期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：1374 / 1376
页数：3
相关论文
共 10 条
  • [1] Baltrameyunas R., 1976, Soviet Physics - Solid State, V18, P660
  • [2] BEKMANN E, 1973, IZV AN SSSR FIZ+, V37, P329
  • [3] BEREGULIN EV, 1975, SOV PHYS SEMICOND+, V9, P576
  • [4] Dneprovskii V. S., 1976, Soviet Journal of Quantum Electronics, V6, P298, DOI 10.1070/QE1976v006n03ABEH010996
  • [5] DVORNIKOV DP, 1976, SOV PHYS SEMICOND+, V10, P283
  • [6] DVORNIKOV DP, 1976, FTP, V10, P2308
  • [7] GRASYUK AZ, 1976, SOV PHYS SEMICOND+, V10, P159
  • [8] Keldysh L. V., 1964, ZH EKSP TEOR FIZ, V47, P1515
  • [9] NONLINEAR ABSORPTION IN DIRECT-GAP SEMICONDUCTORS
    MITRA, SS
    NARDUCCI, LM
    SHATAS, RA
    TSAY, YF
    VAIDYANATHAN, A
    [J]. APPLIED OPTICS, 1975, 14 (12): : 3038 - 3042
  • [10] RESONANT SCATTERING OR ABSORPTION FOLLOWED BY EMISSION
    SOLIN, JR
    MERKELO, H
    [J]. PHYSICAL REVIEW B, 1975, 12 (02): : 624 - 629
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