INSULATING FILMS ON A QUANTUM SEMICONDUCTOR - LIGHT-EMITTING POROUS SILICON

被引:14
作者
KOCH, F
机构
[1] Physics Department E16, Technical University of Munich
关键词
D O I
10.1016/0167-9317(95)00052-A
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We show that luminescing porous Si is a composite system of a nanometer-sized crystalline Si core and a passivant mantle layer. Although the light emission is superficially similar between the hydrided, oxihydrided and the massively oxidized form of porous Si, we highlight here one distinctive difference - the presence or absence of a particle-size dependence. It is shown that the surface-state model description, which considers energy levels in the interfacial layer, can account for the light emission in both limits.
引用
收藏
页码:237 / 245
页数:9
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