OPTICALLY-ACTIVE 3-DIMENSIONALLY CONFINED STRUCTURES REALIZED VIA MOLECULAR-BEAM EPITAXIAL-GROWTH ON NONPLANAR GAAS (111)B

被引：39

作者：

RAJKUMAR, KC

MADHUKAR, A

RAMMOHAN, K

RICH, DH

CHEN, P

CHEN, L

机构：

[1] Photonic Materials and Devices Laboratory, Department of Materials Science and Engineering, University of Southern California, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111) B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions less than or similar 100 nm.

引用

页码：2905 / 2907

页数：3

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