DC BIAS-SPUTTERED ALUMINUM FILMS

被引：38

作者：

BLACHMAN, AG ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 01期

关键词：

Compendex;

D O I：

10.1116/1.1318029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

FILMS

引用

页码：299 / 302

页数：4

共 15 条

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[2]

Castro P. L., 1969, Ohmic contacts to semiconductors, P332

[3]

CHALMERS B, 1959, PHYSICAL METALLURGY, P332

[4]

COOK HC, 1966, T METALL SOC AIME, V236, P314

[5]

DHEURLE F, 1968, T METALL SOC AIME, V242, P502

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[7] INTRINSIC STRESS IN EVAPORATED METAL FILMS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01) :138-&

[8] SPUTTERING YIELDS OF METALS FOR AR+ AND NE+ IONS WITH ENERGIES FROM 50 TO 600 EV [J].

LAEGREID, N ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (03) :365-&

[9] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J].

MAISSEL, LI ;

SCHAIBLE, PM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :237-&

[10] RESISTIVITY AND STRUCTURE OF EVAPORATED ALUMINUM FILMS [J].

MAYADAS, AF ;

FEDER, R ;

ROSENBERG, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :690-+

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