ALUMINUM-DOPED ZINC-OXIDE TRANSPARENT CONDUCTORS DEPOSITED BY THE SOL-GEL PROCESS

被引：343
作者：
TANG, W
CAMERON, DC
机构：
[1] School of Electronic Engineering, Dublin City University, Dublin
来源：
THIN SOLID FILMS | 1994年 / 238卷 / 01期
关键词：
D O I：
10.1016/0040-6090(94)90653-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of transparent conducting aluminum-doped ZnO have been deposited using a sol-gel process. The dependence of electrical characteristics upon aluminum concentration in the films and upon post-deposition heat treatment in vacuum was examined. The effect of changing the aluminum-to-zinc ratio from 0% to 4.5% (atomic) and the heat treatment temperature in vacuum has been thoroughly investigated. Resistivities of (7-10) X 10(-4) OMEGA cm have been achieved for ZnO:Al films with Al/Zn ratios of 0.8 at.% heated to 450-degrees-C in vacuum. Transmittance in the visible region is above 900/o. Similar results were obtained using aluminum chloride and aluminum nitrate as the aluminum precursor.
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页码：83 / 87
页数：5
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