CURRENT TRANSPORT IN METAL SEMICONDUCTOR CONTACTS - UNIFIED APPROACH

被引：37
作者：
FONASH, SJ
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 07期
关键词：
D O I：
10.1016/0038-1101(72)90099-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：783 / &
相关论文
共 12 条
[1]   TUNNELING SPECTROSCOPY IN GAAS [J].
CONLEY, JW ;
MAHAN, GD .
PHYSICAL REVIEW, 1967, 161 (03) :681-+
[2]   ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].
CONLEY, JW ;
DUKE, CB ;
MAHAN, GD ;
TIEMANN, JJ .
PHYSICAL REVIEW, 1966, 150 (02) :466-&
[3]   NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].
CROWELL, CR ;
RIDEOUT, VL .
SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&
[4]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[5]   RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&
[6]  
Good RH., 1956, FIELD EMISSION, P176
[7]   TUNNELING THROUGH ASYMMETRIC BARRIERS [J].
HARTMAN, TE .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3283-&
[8]   A WKB-TYPE APPROXIMATION TO THE SCHRODINGER EQUATION [J].
MILLER, SC ;
GOOD, RH .
PHYSICAL REVIEW, 1953, 91 (01) :174-179
[9]   EFFECTS OF IMAGE FORCE AND TUNNELING ON CURRENT TRANSPORT IN METAL-SEMICONDUCTOR (SCHOTTKY-BARRIER) CONTACTS [J].
RIDEOUT, VL ;
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :993-&
[10]   VOLT-CURRENT CHARACTERISTICS FOR TUNNELING THROUGH INSULATING FILMS [J].
STRATTON, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) :1177-&
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