GAAS P-N-JUNCTION FORMED IN QUANTUM WIRE CRYSTALS

被引：184
作者：
HARAGUCHI, K
KATSUYAMA, T
HIRUMA, K
OGAWA, K
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期
关键词：
D O I：
10.1063/1.106556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current-voltage and capacitance-voltage characteristics confirm the formation of the p-n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantum-size p-n junction are possible.
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页码：745 / 747
页数：3
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