OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES

被引:89
作者
FAVENNEC, PN
LHARIDON, H
MOUTONNET, D
SALVI, M
GAUNEAU, M
机构
[1] Center National d'Etudes des Télécommunications LAB/OCM, Lannion
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期
关键词
Erbium; Implantation; Oxygen; Photoluminescence; Rare earth; Silicon;
D O I
10.1143/JJAP.29.L524
中图分类号
O59 [应用物理学];
学科分类号
摘要
Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 1018cm-3of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 µm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed. © 1990 IOP Publishing Ltd.
引用
收藏
页码:L524 / L526
页数:3
相关论文
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