DIRECT OBSERVATION OF SIH3 ON A 1-PERCENT-HF-TREATED SI(111) SURFACE BY SCANNING TUNNELING MICROSCOPY

被引：70

作者：

MORITA, Y

MIKI, K

TOKUMOTO, H

机构：

[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) has been made on an as-prepared Si(111) surface by the 1%-HF treatment. The STM images for both the empty and filled states exhibit regular dots with the threefold symmetry on the flat parts of the surface: the distance between dots measures 2.2 angstrom. The origin of these dots can be ascribed to the H atoms of the trihydride (SiH3) phase on the Si(111) surface. The electrons can tunnel from or to the tail states of the sigma (filled) states or the sigma* (empty) states around the H atoms for the SiH3 radicals, respectively.

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页码：1347 / 1349

页数：3

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