LOW-TEMPERATURE IMPURITY CONDUCTION IN N-TYPE SILICON

被引：14

作者：

ATKINS, KR

DONOVAN, R

WALMSLEY, RH

机构：

来源：

PHYSICAL REVIEW | 1960年 / 118卷 / 02期

关键词：

D O I：

10.1103/PhysRev.118.411

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：411 / 414

页数：4

共 18 条

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