CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS

被引：139

作者：

HAMASAKI, M

ADACHI, T

WAKAYAMA, S

KIKUCHI, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.325356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3987 / 3992

页数：6

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