GETTERING OF GOLD AND COPPER FROM SILICON

被引：32

作者：

LAMBERT, JL

REESE, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 11期

关键词：

D O I：

10.1016/0038-1101(68)90127-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1055 / &

共 17 条

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[3]

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JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

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ING, SW ;

MORRISON, RE ;

ALT, LL ;

ALDRICH, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :533-537

[8] DISTRIBUTION AND PRECIPITATION OF GOLD IN PHOSPHORUS-DIFFUSED SILICON [J].

JOSHI, ML ;

DASH, S .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2453-&

[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J].

KOOI, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1383-1381

[10] GETTERING OF IRON FROM SILICON [J].

LAMBERT, JL ;

ROY, K ;

REESE, M .

SOLID-STATE ELECTRONICS, 1967, 10 (08) :877-&

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