X-RAY SMALL-ANGLE SCATTERING ANALYSIS OF POROUS SILICON LAYERS

被引：37

作者：

GOUDEAU, P

NAUDON, A

BOMCHIL, G

HERINO, R

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

[2] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN HERES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：625 / 628

页数：4

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