DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON

被引:204
作者
GOBELI, GW
ALLEN, FG
机构
来源
PHYSICAL REVIEW | 1962年 / 127卷 / 01期
关键词
D O I
10.1103/PhysRev.127.141
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:141 / &
相关论文
共 22 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   PHOTOELECTRIC EMISSION AND CONTACT POTENTIALS OF SEMICONDUCTORS [J].
APKER, L ;
TAFT, E ;
DICKEY, J .
PHYSICAL REVIEW, 1948, 74 (10) :1462-1474
[3]  
BROOKS H, 1955, ADV ELECTRON, V7, P118
[4]   SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J].
GOBELI, GW ;
ALLEN, FG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :23-&
[5]   TRANSITION PROBABILITY FOR PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J].
HUNTINGTON, HB ;
APKER, L .
PHYSICAL REVIEW, 1953, 89 (02) :352-356
[6]   THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J].
KANE, EO .
PHYSICAL REVIEW, 1962, 127 (01) :131-&
[7]   CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON [J].
KLEINMAN, L ;
PHILLIPS, JC .
PHYSICAL REVIEW, 1960, 118 (05) :1153-1167
[8]  
KOHN W, 1957, SOLID STATE PHYSICS, P297
[9]   ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J].
LOGAN, RA ;
TRUMBORE, FA ;
GILBERT, JF .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :131-&
[10]  
METHFESSEL S, 1959, Z PHYSIK, V147, P442