HIGH HOLE MOBILITY IN SIGE ALLOYS FOR DEVICE APPLICATIONS

被引：142

作者：

ISMAIL, K ^{[1
]}

CHU, JO ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] CAIRO UNIV,FAC ENGN,DEPT ELECTR & COMMUN,CAIRO,EGYPT

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high hole mobility in modulation-doped SiGe alloys with Ge content up to 80%. The layers which are grown using ultrahigh-vacuum chemical vapor deposition are of high crystalline quality, have smooth surfaces, and have a low density of misfit dislocations. As a result of strain and high Ge content, we have measured hole mobilities in the range of 800-1050 cm2/V s at room temperature, and 3300-3500 cm2/V s at 77 K. The corresponding two-dimensional sheet hole density is about 3 x 10(12) cm-2. Those numbers are, to our knowledge, the highest numbers ever reported for a SiGe alloy. The resistivity of this two-dimensional hole channel at room temperature is, to our knowledge, the lowest for any p-type semiconductor quantum well.

引用

页码：3124 / 3126

页数：3

共 15 条

[1] FABRICATION OF A SI1-XGEX CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) CONTAINING HIGH GE FRACTION LAYER BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].