STATIC CHARACTERISTICS OF THIN-FILM FIELD-EFFECT TRANSISTORS MADE OF A-SI-H

被引：0
|
作者：
GREKOV, EV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A calculation is reported of the static characteristics of a thin-film field-effect transistor made of hydrogenated amorphous silicon (a-Si:H). The distribution of the density of the localized states in the region of the conduction-band tail of a-Si:H is assumed to have an exponential region, followed by linearization. Analytic expressions obtained for the characteristics are in good agreement with the experimental data.
引用
收藏
页码：701 / 704
页数：4
相关论文
共 50 条
12345