PREPARATION AND PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED BY GLOW DISCHARGE TECHNIQUE

被引:17
作者
KATTO, H
KOGA, Y
机构
关键词
D O I
10.1149/1.2407796
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1619 / &
相关论文
共 15 条
[2]   ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].
DEAL, BE ;
FLEMING, PJ ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&
[3]   INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES [J].
DUFFY, MT ;
REVESZ, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :372-+
[4]   PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J].
FERRIEU, E ;
PRUNIAUX, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1008-+
[5]   SILICON NITRIDE FILMS BY REACTIVE SPUTTERING [J].
HU, SM ;
GREGOR, LV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :826-+
[6]  
Nishimatsu S., 1969, Thin film dielectrics, P338
[7]   NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J].
PLISKIN, WA ;
CONRAD, EE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) :43-&
[8]   RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON [J].
SALAMA, CAT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :913-&
[9]   ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].
SNOW, EH ;
GROVE, AS ;
DEAL, BE ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&
[10]   EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].
SNOW, EH ;
GROVE, AS ;
FITZGERALD, DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+