HGCDTE PHOTO-DIODES FORMED BY DOUBLE-LAYER LIQUID-PHASE EPITAXIAL-GROWTH

被引：14

作者：

SHIN, SH

VANDERWYCK, AHB

KIM, JC

CHEUNG, DT

机构：

来源：

关键词：

D O I：

10.1063/1.91958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：402 / 404

页数：3

共 6 条

[1]

HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[2] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES [J].

LANIR, M ;

WANG, CC ;

VANDERWYCK, AHB .

[3]

Mckelvey J.P, 1966, SOLID STATE SEMICOND, P422

[4] LPE GROWTH OF HG0.60CD0.40TE FROM TE-RICH SOLUTION [J].

SCHMIT, JL ;

BOWERS, JE .

[5] CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL-GROWTH OF HG1-XCDXTE [J].

VANIER, PE ;

POLLAK, FH ;

RACCAH, PM .

[6] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J].

WANG, CC ;

SHIN, SH ;

CHU, M ;

LANIR, M ;

VANDERWYCK, AHB .