KINETIC ELLIPSOMETRY STUDY OF THE HYDROGEN PLASMA-ETCHING OF HYDROGENATED AMORPHOUS-SILICON FILMS

被引：16

作者：

GODET, C

DREVILLON, B

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575576

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2482 / 2489

页数：8

共 50 条

[1] SELECTIVE ETCHING OF HYDROGENATED AMORPHOUS-SILICON BY HYDROGEN PLASMA
OTOBE, M
KIMURA, M
ODA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B): : 4442 - 4445
[2] OXIDATION AND ETCHING OF HYDROGENATED AMORPHOUS-SILICON - AN INSITU ELLIPSOMETRY STUDY
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[3] HYDROGEN PLASMA-ETCHING OF AMORPHOUS AND MICROCRYSTALLINE SILICON
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GEERTS, MJ
VANDENHEUVEL, JC
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[4] CHEMICAL ETCHING FOR THE EVALUATION OF HYDROGENATED AMORPHOUS-SILICON FILMS
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[5] ROLE OF HYDROGEN IN HYDROGENATED AMORPHOUS-SILICON FILMS
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[6] INFRARED ELLIPSOMETRY STUDY OF THE OXIDATION MECHANISMS OF HYDROGENATED AMORPHOUS-SILICON
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[7] INFRARED ELLIPSOMETRY STUDY OF THE VIBRATIONAL PROPERTIES AND THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON ULTRATHIN FILMS
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JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 5088 - 5091
[8] STUDY BY ELLIPSOMETRY OF VIBRATIONAL PROPERTIES OF VERY THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON
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[9] INSITU STUDY OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY INFRARED ELLIPSOMETRY
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[10] SOFT HYDROGEN PLASMA EFFECT ON HYDROGENATED AMORPHOUS-SILICON
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COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1979, 289 (15): : 285 - 288

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