ATOMIC-LAYER EPITAXY OF (111)CDTE ON BAF2 SUBSTRATES

被引：15
作者：
FASCHINGER, W
SITTER, H
JUZA, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期
关键词：
D O I：
10.1063/1.100529
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2519 / 2521
页数：3
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