NEGATIVE-U DEFECT - INTERSTITIAL BORON IN SILICON

被引：69
|
作者：
HARRIS, RD [1 ]
NEWTON, JL [1 ]
WATKINS, GD [1 ]
机构：
[1] LEHIGH UNIV,DEPT PHYS,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.36.1094
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1094 / 1103
页数：10
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