NEGATIVE-U DEFECT - INTERSTITIAL BORON IN SILICON

被引：69

作者：

HARRIS, RD ^{[1
]}

NEWTON, JL ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,DEPT PHYS,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1094

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1094 / 1103

页数：10

共 41 条

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