EFFECT OF STRUCTURAL MODULATION ON THE ELECTRONIC-STRUCTURE OF BI-BASED SUPERCONDUCTORS

被引：1
|
作者：
CHEN, XA [1 ]
FU, H [1 ]
TANG, YQ [1 ]
ZHU, MH [1 ]
XU, J [1 ]
机构：
[1] ACAD SINICA,INST ELECTR,BEIJING 100080,PEOPLES R CHINA
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1992年 / 53卷 / 02期
关键词：
ELECTRONIC STRUCTURE OF BI2SR2CUO6; STRUCTURAL MODULATION; (CU4BI4O16)O-12 COMPLEX;
D O I：
10.1016/0022-3697(92)90059-M
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Tight-binding band calculations of the extended Huckel type were performed on the Cu4Bi4O16(12-) complex modelling the Bi2Sr2CuO6 sublattice. We investigate the effect of structural modulation on the electronic energy spectrum and chemical bonding nature of individual atoms. The results show that the structural modulation causes a splitting of the Bi 6p states and a shift of the Bi 6p-block bands toward the lower energy region, accompanied by a charge modulation of Bi and O atoms along the Bi-O double layers.
引用
收藏
页码：299 / 303
页数：5
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