OPTICAL ABSORPTION INDUCED BY A LASER PULSE IN II-VI SEMICONDUCTORS

被引：6
|
作者：
KUBOTA, K
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1971年 / 30卷 / 01期
关键词：
D O I：
10.1143/JPSJ.30.167
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：167 / &
相关论文
共 50 条
  • [11] Collective dimer stress induced dichroism in II-VI semiconductors
    Balderas-Navarro, RE
    Bonanni, A
    Ramil, AM
    Sitter, H
    Stifter, D
    Hingerl, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (01): : 155 - 159
  • [12] Ultrafast phenomena in II-VI semiconductors
    Kalt, H
    Wachter, S
    Luerssen, D
    Hoffmann, J
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 139 - 146
  • [13] THE PROBLEM OF DOPING IN II-VI SEMICONDUCTORS
    CHADI, DJ
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1994, 24 : 45 - 62
  • [14] II-VI SEMICONDUCTORS COME OF AGE
    GUNSHOR, R
    NURMIKKO, A
    KOBAYASHI, M
    PHYSICS WORLD, 1992, 5 (03) : 46 - 49
  • [15] Applications of II-VI semimagnetic semiconductors
    Mycielski, A.
    Kowalczyk, L.
    Galazka, R. R.
    Sobolewski, Roman
    Wang, D.
    Burger, A.
    Sowinska, M.
    Groza, M.
    Siffert, P.
    Szadkowski, A.
    Witkowska, B.
    Kaliszek, W.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 423 (1-2) : 163 - 168
  • [16] Chemical polishing of II-VI semiconductors
    Tomashik, VN
    Tomashik, ZF
    INORGANIC MATERIALS, 1997, 33 (12) : 1230 - 1233
  • [17] Excitons in motion in II-VI semiconductors
    Davies, J. J.
    Smith, L. C.
    Wolverson, D.
    Kochereshko, V. P.
    Cibert, J.
    Mariette, H.
    Boukari, H.
    Wiater, M.
    Karczewski, G.
    Wojtowicz, T.
    Gust, A.
    Kruse, C.
    Hommel, D.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (06): : 1521 - 1527
  • [18] BOUND BIEXCITONS IN II-VI SEMICONDUCTORS
    RAZBIRIN, BS
    NELSON, DK
    ERLAND, J
    PANTKE, KH
    LYSSENKO, VG
    HVAN, JM
    SOLID STATE COMMUNICATIONS, 1995, 93 (01) : 65 - 70
  • [19] Intrinsic defects in II-VI semiconductors
    Watkins, GD
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 338 - 344
  • [20] Electron mobility in II-VI semiconductors
    Rode, D. L.
    PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4036 - 4044
12345