THERMAL-DEGRADATION OF INP AND ITS CONTROL IN LPE GROWTH

被引：66

作者：

LUM, WY

CLAWSON, AR

机构：

[1] Electronic Material Sciences Division, Naval Ocean Systems Center, San Diego

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal degradation of polished InP surfaces of (001) and (111) B orientations has been investigated. These specimens show severe deterioration when annealed under conditions typically used in the LPE growth of InP and InGaAsP layers. We have successfully controlled the decomposition of InP substrates in LPE growth by introducing minute amounts of phosphine gas (PH 3) into the flowing hydrogen ambient. A temperature-dependent threshold concentration has been determined above which no thermal degradation is observed.

引用

页码：5296 / 5301

页数：6

共 25 条

[1]

BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[2]

BARRERA J, 1975, 5TH P BIENN CORN EL, P135

[3] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].