SELECTIVE EPITAXY BASE FOR BIPOLAR-TRANSISTORS

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &

[2] SELECTIVE EPITAXY BASE TRANSISTOR (SEBT) [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 259 - 261

[3] GINSBERG B, 1987, 10TH C CHEM VAP DEP, P991

[4] SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY. [J]. Microelectronic Engineering, 1986, 4 (01) : 3 - 33

[5] AN ADVANCED HIGH-PERFORMANCE TRENCH-ISOLATED SELF-ALIGNED BIPOLAR TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2246 - 2254

[6] LI GP, 1987, IEDM, P174

[7] MICHEL AE, IN PRESS APPL PHYS L

[8] APPLICATION OF SELECTIVE SILICON EPITAXIAL-GROWTH FOR CMOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1738 - 1744

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &

[2] SELECTIVE EPITAXY BASE TRANSISTOR (SEBT) [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 259 - 261

[3] GINSBERG B, 1987, 10TH C CHEM VAP DEP, P991

[4] SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY. [J]. Microelectronic Engineering, 1986, 4 (01) : 3 - 33

[5] AN ADVANCED HIGH-PERFORMANCE TRENCH-ISOLATED SELF-ALIGNED BIPOLAR TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2246 - 2254

[6] LI GP, 1987, IEDM, P174

[7] MICHEL AE, IN PRESS APPL PHYS L

[8] APPLICATION OF SELECTIVE SILICON EPITAXIAL-GROWTH FOR CMOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1738 - 1744